BEIJING: Chinese scientists have developed the world’s fastest flash memory device capable of storing data at an unprecedented speed.
According to Chinese state media, the device can store the data at a speed of one bit per 400 picoseconds. The device has set a new standard for semiconductor storage performance.
Dubbed PoX, this non-volatile memory technology far surpasses the speed of even the fastest volatile memory types, such as Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM), which usually take between 1 and 10 nanoseconds to store a single bit.
In contrast, a picosecond—just one-trillionth of a second, or one-thousandth of a nanosecond—represents the astonishing speed at which PoX operates.
Though volatile memory excels in speed, it loses data once power is cut off, making it unsuitable for low-power or energy-sensitive applications.
Unlike traditional flash memory, which retains data without power but struggles to keep up with the high-speed data access demands of modern technologies, especially in Artificial Intelligence (AI) systems, this new approach offers a breakthrough.
A research team from Fudan University in Shanghai addressed this challenge by developing a two-dimensional Dirac graphene-channel flash memory.
This cutting-edge design allowed them to surpass the long-standing speed limitations of non-volatile memory in both data storage and retrieval.
The team’s groundbreaking results were published Wednesday in the journal Nature.
“By using AI algorithms to optimise process testing conditions, we have significantly advanced this innovation and paved the way for its future applications, lead researcher Zhou Peng remarked.
